Czochralski Method for Crystal Growth οf Reactive Intermetallics
نویسندگان
چکیده
منابع مشابه
Numerical Modeling of Czochralski Silicon Crystal Growth
Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
متن کاملCrystal Temperature Control in the Czochralski Crystal Growth Process
This work proposes a control configuration and a nonlinear multivariable model-based feedback controller for the reduction of thermal gradients inside the crystal in the Czochralski crystal growth process after the crystal radius has reached its final value. Initially, a mathematical model which describes the evolution of the temperature inside the crystal in the radial and axial directions and...
متن کاملDefect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing
Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...
متن کاملHydrodynamic Instabilities in Czochralski Process of Crystal Growth
Abstract. This paper deals with axisymmmetry breaking instabilities in Czochralski process of crystal growth. Numerical linear stability analysis was carried out using the axisymmetric bulk flow model. Stability diagrams of critical Grashof numbers Grc and frequencies ωc dependent on aspect ratio α(=height/radius), 0.4 ≤ α ≤ 1.0 and Prandtl number Pr = 0.01 are shown. Computations were carried ...
متن کاملAnalysis of a Mathematical Model Related to Czochralski Crystal Growth
This paper is devoted to the study of a stationary problem consisting of the Boussinesq approximation of the Navier–Stokes equations and two convection–diffusion equations for the temperature and concentration, respectively. The equations are considered in 3D and a velocity–pressure formulation of the Navier–Stokes equations is used. The problem is complicated by nonstandard boundary conditions...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2013
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.124.340